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TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 1 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? electronic warfare ? communications product features functional block diagram ? frequency range: 32.0 ? 38.0 ghz ? power: 36 dbm psat ? pae: 22% ? gain: 18 db ? return loss: 12 db input, 12 db output ? bias: vd = 6 v, id = 2.1 a, vg = -0.60 v typical ? dimensions: 5.4 x 4.1 x 0.05 mm vg vg rf in 1 6 TGA2575 2 5 rf out 4 vd vd 3 general description bond pad configuration triquint?s TGA2575 is a wideband power amplifier fabricated on triquint?s production-released 0.15um pwr-phemt process. operating from 32ghz to 38ghz, it achieves 36dbm saturated output power, 22 % pae and 18db small signal gain over most of the ban d. fully matched to 50 ohms, rohs compliant and with integrated dc blocking caps on both i/o ports, the TGA2575 is ideally suited to support both commercia l and defense related opportunities. the TGA2575 is 100% dc and rf tested on-wafer to ensure compliance to performance specifications. bond pad # symbol 1 rf in 2, 6 vg 3, 5 vd 4 rf out ordering information part no. eccn description TGA2575 3a001.b.2.d ka-band power amplifier . www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 2 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain voltage,vd +6.5 v gate voltage,vg -5 to 0 v drain to gate voltage, vd-vg 10 drain current, id 3.8 a gate current, ig -14 to 4.8 ma power dissipation, pdiss 21 w rf input power, cw, 50 ,t = 25oc 23 dbm channel temperature, tch 200 o c mounting temperature (30 seconds) 320 o c storage temperature -40 to 150 o c operation of this device outside the parameter rang es given above may cause permanent damage. these are stress ratings only, and functional operation of the devic e at these conditions is not implied. recommended operating conditions parameter min typical max units vd 6 v id 2.1 a id_d rive (under rf drive) 3.3 a vg -0.60 v electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommen ded operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vd = 6 v, id = 2.1 a, vg = -0.60 v typical. parameter min typical max units operational frequency range 32 38 ghz gain 18 db input return loss 12 db output return loss 12 db output power @ saturation 36 dbm pae @ saturation 22 % www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 3 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 70 c jc = 6.2c/w channel temperature (tch), and median lifetime (tm ) tbase = 70 c, vd = 6 v, id = 2.1 a, pdiss = 12.6 w tch = 148c tm = 1.3 e+6 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 70 c, vd = 6 v, id = 3.3 a, pout = 36 dbm, pdiss = 15.8 w tch = 168c tm = 1.5e+5 hours 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 1.e+14 1.e+15 25 50 75 100 125 150 175 200 median lifetime, tm (hours) channel temperature, tch (c) median lifetime (tm) vs. channel temperature (tch) fet5 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 4 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance -25 -20 -15 -10 -5 05 10 15 20 25 2 4 6 8 10 12 14 16 18 20 22 25 30 35 40 45 return loss (db) gain (db) frequency (ghz) s-parameters vs. freq. vd = 6 v, id = 2.1 a, vg = -0.60 v typical, +25c gain irl orl -25 -20 -15 -10 -5 05 10 15 20 25 12 13 14 15 16 17 18 19 20 21 22 30 31 32 33 34 35 36 37 38 39 40 return loss (db) gain (db) frequency (ghz) s-parameters vs. freq. vd = 6 v, id = 2.1 a, vg = -0.60 v typical, +25c gain irl orl 22 24 26 28 30 32 34 36 38 6 8 10 12 14 16 18 20 22 24 output power (dbm) input power (dbm) output power vs. input power vs. freq. vd = 6 v, id = 2.1 a, vg = -0.60 v typical, +25c 30ghz 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz 38ghz 10 12 14 16 18 20 22 6 8 10 12 14 16 18 20 22 24 power gain (db) input power (dbm) power gain vs. input power vs. freq. vd = 6 v, id = 2.1 a, vg = -0.60 v typical, +25c 30ghz 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz 38ghz 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 9 11 13 15 17 19 21 23 25 drain current (a) input power (dbm) drain current vs. input power vs. freq. vd = 6 v, id = 2.1 a, vg = -0.60 v typical, +25c 30ghz 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz 38ghz 0 5 10 15 20 25 30 6 8 10 12 14 16 18 20 22 24 % power added efficiency input power (dbm) pae vs. input power vs. freq. vd = 6 v, id = 2.1 a, vg = -0.60 v typical, +25c 30ghz 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz 38ghz www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 5 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) 28 29 30 31 32 33 34 35 36 37 38 30 32 34 36 38 output power (dbm) frequency (ghz) output power vs. freq. vs. input power vd = 6 v, id = 2.1 a, vg = -0.60 v typical, +25c pin=+23dbm pin=+22dbm pin=+21dbm pin=+20dbm pin=+19dbm pin=+18dbm pin=+17dbm pin=+16dbm pin=+15dbm 0 5 10 15 20 25 30 35 30 32 34 36 38 % power added efficiency frequency (ghz) pae vs. freq. vs. input power vd = 6 v, id = 2.1 a, vg = -0.60 v typical, +25c pin=+23dbm pin=+22dbm pin=+21dbm pin=+20dbm pin=+19dbm pin=+18dbm pin=+17dbm pin=+16dbm pin=+15dbm www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 6 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit rf in 1 6 TGA2575 2 5 rf out 4 3 c2 1000 pf c1 1000 pf vg 1/ c4 1000 pf c6 0.01 uf c3 1000 pf c5 0.01 uf vd 1/ vg must be biased from both sides (pins 2 and 6) vd must be biased from both sides (pins 3 and 5) bias - up procedure bias - down procedure vg set to -1.5 v turn off rf supply vd set to +6 v reduce vg to -1.5v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 2.1 a . this will be ~ vg = -0.60 v turn vd to 0 v apply rf signal to rf input turn vg to 0 v 1/ additional bypass capacitors may be required at this location. the presence and value of these capa citors varies by application. variables include power supply impedan ce, power supply stability with reactive loads, and the inductance from the power supply to this assembly. 1 to 47 uf tantalum capacitors are commonly used here. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 7 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? bond pad description bond pad symbol description 1 rf in input, matched to 50 ohms. 2, 6 vg gate voltage. 3, 5 vd drain voltage. 4 rf out output, matched to 50 ohms. gnd backside of die. 1 2 3 4 5 6 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 8 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? assembly drawing bill of material ref des value description manufacturer part number c1, c2, c3,c4 100 pf cap, 50v, 25%, single layer ca p various c5, c6 0.01 uf cap, 50v, 10%, smd various www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 9 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information unit: millimeters thickness: 0.05 die x, y size tolerance: +/- 0.050 chip edge to bond pad dimensions are shown to cente r of pad ground is backside of die bond pad symbol pad size 1 rf in 0.126 x 0.202 2, 6 vg 0.101 x 0.101 3, 5 vd 0.126 x 0.302 4 rf out 0.126 x 0.202 2.784 0.097 0 4.022 0.109 3.627 0.516 0 2.603 0.109 5.307 5.404 5.295 4.132 3.629 0.523 1 2 3 4 5 6 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 10 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? product compliance information esd information esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22-a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazar dous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce 3a001.b.2.d assembly notes component placement and adhesive attachment assembl y notes: ? vacuum pencils and/or vacuum collets are the prefer red method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low- power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to tempe ratures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critic al for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere . interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconn ect technique. ? force, time, and ultrasonics are critical parameter s. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA2575 ka-band 4 watt power amplifier preliminary data sheet: rev - 3/8/11 - 11 of 11 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 for technical questions and application information : email: info-products@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding t he information contained herein. triquint assumes no responsibility or liab ility whatsoever for any of the information contain ed herein. triquint assumes no responsibility or liability whatsoever f or the use of the information contained herein. th e information contained herein is provided "as is, where is" and with all f aults, and the entire risk associated with such inf ormation is entirely with the user. all information contained herein is subj ect to change without notice. customers should obt ain and verify the latest relevant information before placing orders for triq uint products. the information contained herein or any use of such information does not grant, explicitly or implicitl y, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information its elf or anything described by such information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe perso nal injury or death. copyright ? 2011 triquint semiconductor, inc. all r ights reserved. www.datasheet.net/ datasheet pdf - http://www..co.kr/

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